AON6508 Datasheet and Replacement
Type Designator: AON6508
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 898 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: DFN5X6
AON6508 substitution
AON6508 Datasheet (PDF)
aon6508.pdf
AON650830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aon6508.pdf
AON650830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
aon6500.pdf
AON650030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 200A Low Gate Charge RDS(ON) (at VGS=10V)
aon6504.pdf
AON650430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AON6458 , AON6482 , AON6484 , AON6486 , AON6500 , AON6502 , AON6504 , AON6506 , IRFP450 , AON6510 , AON6512 , AON6516 , AON6518 , AON6520 , AON6522 , AON6524 , AON6526 .
History: P06P03LCG | SIHF9520 | AP4503AGEM | AFN04N60T220FT | TSM1N60LCH | NTD85N02R | HMS21N70A
Keywords - AON6508 MOSFET datasheet
AON6508 cross reference
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History: P06P03LCG | SIHF9520 | AP4503AGEM | AFN04N60T220FT | TSM1N60LCH | NTD85N02R | HMS21N70A
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