AON6530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6530

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 35.5 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 72 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.4 V

Tiempo de elevación (tr): 7 nS

Conductancia de drenaje-sustrato (Cd): 570 pF

Resistencia drenaje-fuente RDS(on): 0.0045 Ohm

Empaquetado / Estuche: DFN5x6

Búsqueda de reemplazo de MOSFET AON6530

AON6530 Datasheet (PDF)

1.1. aon6530.pdf Size:288K _aosemi

AON6530 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 72A • Low Gate Charge RDS(ON) (at VGS=10V) < 4.5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 7.8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

4.1. aon6532.pdf Size:312K _aosemi

AON6532 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A • Low Gate Charge RDS(ON) (at VGS=10V) < 5.0mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 9.0mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters i

4.2. aon6538.pdf Size:288K _aosemi

AON6538 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 75A • Low Gate Charge RDS(ON) (at VGS=10V) < 4mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 7.4mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in

4.3. aon6534.pdf Size:299K _aosemi

AON6534 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A • Low Gate Charge RDS(ON) (at VGS=10V) < 8mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 12mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in C

4.4. aon6536.pdf Size:327K _aosemi

AON6536 30V N-Channel MOSFET General Description Product Summary The AON6536 combines advanced trench MOSFET technology with a low resistance package to provide VDS 30V extremely low RDS(ON). This device is ideal for load switch ID (at VGS=10V) 55A and battery protection applications. RDS(ON) (at VGS=10V) < 7mΩ RDS(ON) (at VGS=4.5V) < 10mΩ 100% UIS Tested 100% Rg Tested D

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