AON6530
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6530
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 72
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 570
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
DFN5X6
AON6530
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6530
Datasheet (PDF)
..1. Size:288K aosemi
aon6530.pdf
AON653030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 72A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. Size:299K aosemi
aon6534.pdf
AON653430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
8.2. Size:312K aosemi
aon6532.pdf
AON653230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 68A Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:288K aosemi
aon6538.pdf
AON653830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 75A Low Gate Charge RDS(ON) (at VGS=10V)
8.4. Size:327K aosemi
aon6536.pdf
AON653630V N-Channel MOSFETGeneral Description Product SummaryThe AON6536 combines advanced trench MOSFETtechnology with a low resistance package to provideVDS30Vextremely low RDS(ON). This device is ideal for load switch ID (at VGS=10V) 55Aand battery protection applications. RDS(ON) (at VGS=10V)
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