AON6810 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6810
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 746 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm
Encapsulados: DFN5X6BEP1
Búsqueda de reemplazo de AON6810 MOSFET
- Selecciónⓘ de transistores por parámetros
AON6810 datasheet
aon6810.pdf
AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)
aon6812.pdf
AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V)
aon6816.pdf
AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V)
aon6884.pdf
AON6884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34A all purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)
Otros transistores... AON6752, AON6754, AON6756, AON6758, AON6760, AON6774, AON6780, AON6782, IRFZ46N, AON6812, AON6816, AON6850, AON6884, AON6906A, AON6908A, AON6910A, AON6912A
History: P0603BEAD
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