AON6810 Todos los transistores

 

AON6810 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6810

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 746 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm

Encapsulados: DFN5X6BEP1

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AON6810 datasheet

 ..1. Size:299K  aosemi
aon6810.pdf pdf_icon

AON6810

AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V)

 8.1. Size:276K  aosemi
aon6812.pdf pdf_icon

AON6810

AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:282K  aosemi
aon6816.pdf pdf_icon

AON6810

AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:640K  1
aon6884.pdf pdf_icon

AON6810

AON6884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34A all purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V)

Otros transistores... AON6752, AON6754, AON6756, AON6758, AON6760, AON6774, AON6780, AON6782, IRFZ46N, AON6812, AON6816, AON6850, AON6884, AON6906A, AON6908A, AON6910A, AON6912A

 

 

 

 

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