AON6810 MOSFET Datasheet: N-Ch, 30V, 20A. Full specification with pinout and replacement list

AON6810 Specs and Replacement

Type Designator: AON6810

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 746 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm

Package: DFN5X6BEP1

AON6810 substitution

- MOSFET ⓘ Cross-Reference Search

AON6810 datasheet

..1. Size:299K aosemi
aon6810.pdf pdf_icon

AON6810 AlphaMOS 30V Common Drain N-Channel General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 20A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.1. Size:276K aosemi
aon6812.pdf pdf_icon

AON6812 AlphaMOS 30V Common Drain N-Channel General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 28A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

8.2. Size:282K aosemi
aon6816.pdf pdf_icon

AON6816 30V Dual N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 16A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

9.1. Size:640K 1
aon6884.pdf pdf_icon

AON6884 40V Dual N-Channel MOSFET General Description Product Summary VDS 40V The AON6884 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This is an ID (at VGS=10V) 34A all purpose device that is suitable for use in a wide range RDS(ON) (at VGS=10V) ... See More ⇒