AON7474A Todos los transistores

 ..1. Size:327K  aosemi
 aon7474a.pdf

AON7474A 75V N-Channel AlphaMOS General Description Product Summary VDS Trench Power MOSFET technology 75V Low RDS(ON) ID (at VGS=10V) 7.5A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:267K  1
 aon7421.pdf

AON7421 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 9.2. Size:319K  1
 aon7405.pdf

AON7405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)

 9.3. Size:465K  1
 aon7423.pdf

AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 9.4. Size:338K  1
 aon7410.pdf

AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON)

 9.5. Size:262K  1
 aon7408.pdf

AON7408 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A This device is suitable for use in general purpose RDS(ON) (at VGS=10V)

 9.6. Size:270K  1
 aon7406.pdf

AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)

 9.7. Size:172K  1
 aon7403.pdf

AON7403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

 9.8. Size:320K  1
 aon7400a.pdf

 9.9. Size:257K  1
 aon7418.pdf

AON7418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 9.10. Size:323K  1
 aon7409.pdf

AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 9.11. Size:269K  1
 aon7401.pdf

AON7401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

 9.12. Size:495K  1
 aon7407.pdf

AON7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

 9.13. Size:265K  aosemi
 aon7446.pdf

AON7446 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON7446 is fabricated with SDMOSTM trench ID (at VGS=10V) 8A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.14. Size:267K  aosemi
 aon7421.pdf

AON7421 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 9.15. Size:297K  aosemi
 aon7462.pdf

AON7462 300V,2.5A N-Channel MOSFET General Description Product Summary The AON7462 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of 350V@150 VDS performance and robustness in popular AC-DC 2.5A ID (at VGS=10V) applications.By providing low RDS(on), Ciss and Crss along with

 9.16. Size:199K  aosemi
 aon7400.pdf

AON7400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26A This device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V)

 9.17. Size:268K  aosemi
 aon7448.pdf

AON7448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON7448 is fabricated with SDMOSTM trench ID (at VGS=10V) 24A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.18. Size:319K  aosemi
 aon7405.pdf

AON7405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)

 9.19. Size:238K  aosemi
 aon7424.pdf

AON7424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7424 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.20. Size:301K  aosemi
 aon7402.pdf

AON7402 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7402 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

 9.21. Size:253K  aosemi
 aon7442.pdf

AON7442 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 9.22. Size:242K  aosemi
 aon7452.pdf

AON7452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON7452 is fabricated with SDMOSTM trench ID (at VGS=10V) 5.5A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.23. Size:313K  aosemi
 aon7440.pdf

AON7440 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power technology Low RDS(ON) ID (at VGS=10V) 50A High Current Capability RDS(ON) (at VGS=10V)

 9.24. Size:290K  aosemi
 aon7423.pdf

AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 9.25. Size:338K  aosemi
 aon7410.pdf

AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON)

 9.26. Size:262K  aosemi
 aon7408.pdf

AON7408 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A This device is suitable for use in general purpose RDS(ON) (at VGS=10V)

 9.27. Size:288K  aosemi
 aon7414.pdf

AON7414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.28. Size:385K  aosemi
 aon7416.pdf

AON7416 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7416 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 40A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

 9.29. Size:270K  aosemi
 aon7406.pdf

AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)

 9.30. Size:163K  aosemi
 aon7428.pdf

AON7428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7428 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50A This device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

 9.31. Size:172K  aosemi
 aon7403.pdf

AON7403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

 9.32. Size:320K  aosemi
 aon7400a.pdf

 9.33. Size:352K  aosemi
 aon7422e.pdf

AON7422E 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.34. Size:259K  aosemi
 aon7422g.pdf

AON7422G 30V N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)

 9.35. Size:386K  aosemi
 aon7436.pdf

AON7436 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON7436 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 23A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.36. Size:147K  aosemi
 aon7430l.pdf

AON7430L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and (VGS = 10V) ID = 20A general purpose applications. (VGS = 10V) RDS(ON)

 9.37. Size:268K  aosemi
 aon7450.pdf

AON7450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON7450 is fabricated with SDMOSTM trench ID (at VGS=10V) 21A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.38. Size:333K  aosemi
 aon7400b.pdf

AON7400B 30V N-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)

 9.39. Size:257K  aosemi
 aon7418.pdf

AON7418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

 9.40. Size:323K  aosemi
 aon7409.pdf

AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

 9.41. Size:247K  aosemi
 aon7412.pdf

AON7412 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7412 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 16A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.42. Size:269K  aosemi
 aon7401.pdf

AON7401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

 9.43. Size:274K  aosemi
 aon7426.pdf

AON7426 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.44. Size:153K  aosemi
 aon7430.pdf

AON7430 30V N-Channel MOSFET General Description Features The AON7430 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and ID = 34A (VGS = 10V) general purpose applications. RDS(ON)

 9.45. Size:524K  aosemi
 aon7458.pdf

AON7458 250V,5A N-Channel MOSFET General Description Product Summary The AON7458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 5A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)

 9.46. Size:506K  aosemi
 aon7460.pdf

AON7460 300V,4A N-Channel MOSFET General Description Product Summary The AON7460 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 350V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 4A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)

 9.47. Size:344K  aosemi
 aon7404g.pdf

AON7404G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

 9.48. Size:164K  aosemi
 aon7422l.pdf

AON7422 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40A This device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

 9.49. Size:242K  aosemi
 aon7407.pdf

AON7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

 9.50. Size:268K  aosemi
 aon7432.pdf

AON7432 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7432 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 18A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

 9.51. Size:233K  aosemi
 aon7404.pdf

AON7404 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

 9.52. Size:263K  aosemi
 aon7444.pdf

AON7444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON7444 is fabricated with SDMOSTM trench ID (at VGS=10V) 33A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.53. Size:327K  aosemi
 aon7466.pdf

AON7466 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7466 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

 9.54. Size:1620K  cn vbsemi
 aon7422l.pdf

AON7422L www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control Industri