AON7474A Datasheet and Replacement
Type Designator: AON7474A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 15.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16
V
|Id|ⓘ - Maximum Drain Current: 7.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 30
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13
Ohm
Package:
DFN3X3EP
- MOSFET Cross-Reference Search
AON7474A Datasheet (PDF)
..1. Size:327K aosemi
aon7474a.pdf 
AON7474A75V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power MOSFET technology 75V Low RDS(ON) ID (at VGS=10V) 7.5A Low Gate Charge RDS(ON) (at VGS=10V)
9.1. Size:267K 1
aon7421.pdf
AON742120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7421 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
9.2. Size:319K 1
aon7405.pdf
AON740530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)
9.3. Size:465K 1
aon7423.pdf
AON742320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7423 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)
9.4. Size:338K 1
aon7410.pdf
AON741030V N-Channel MOSFETGeneral Description FeaturesThe AON7410 uses advanced trench technology and design VDS (V) = 30Vto provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)device is suitable for use in DC - DC converters and Load RDS(ON)
9.5. Size:262K 1
aon7408.pdf
AON740830V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7408 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18AThis device is suitable for use in general purpose RDS(ON) (at VGS=10V)
9.6. Size:270K 1
aon7406.pdf
AON740630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7406 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25AThis device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)
9.7. Size:172K 1
aon7403.pdf
AON740330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7403 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
9.8. Size:320K 1
aon7400a.pdf
AON7400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
9.9. Size:257K 1
aon7418.pdf
AON741830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
9.10. Size:323K 1
aon7409.pdf
AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
9.11. Size:269K 1
aon7401.pdf
AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
9.12. Size:495K 1
aon7407.pdf
AON740720V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AON7407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
9.13. Size:265K aosemi
aon7446.pdf
AON744660V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS60VThe AON7446 is fabricated with SDMOSTM trench ID (at VGS=10V) 8Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
9.14. Size:267K aosemi
aon7421.pdf
AON742120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7421 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
9.15. Size:297K aosemi
aon7462.pdf
AON7462300V,2.5A N-Channel MOSFETGeneral Description Product SummaryThe AON7462 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of 350V@150 VDSperformance and robustness in popular AC-DC 2.5A ID (at VGS=10V)applications.By providing low RDS(on), Ciss and Crss along with
9.16. Size:199K aosemi
aon7400.pdf
AON740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7400 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26AThis device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V)
9.17. Size:268K aosemi
aon7448.pdf
AON744880V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AON7448 is fabricated with SDMOSTM trench ID (at VGS=10V) 24Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
9.18. Size:319K aosemi
aon7405.pdf
AON740530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)
9.19. Size:238K aosemi
aon7424.pdf
AON742430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7424 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.20. Size:301K aosemi
aon7402.pdf
AON740230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7402 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
9.21. Size:253K aosemi
aon7442.pdf
AON744230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
9.22. Size:242K aosemi
aon7452.pdf
AON7452100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON7452 is fabricated with SDMOSTM trench ID (at VGS=10V) 5.5Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
9.23. Size:313K aosemi
aon7440.pdf
AON744030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power technology Low RDS(ON) ID (at VGS=10V) 50A High Current Capability RDS(ON) (at VGS=10V)
9.24. Size:290K aosemi
aon7423.pdf
AON742320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7423 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)
9.25. Size:338K aosemi
aon7410.pdf
AON741030V N-Channel MOSFETGeneral Description FeaturesThe AON7410 uses advanced trench technology and design VDS (V) = 30Vto provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)device is suitable for use in DC - DC converters and Load RDS(ON)
9.26. Size:262K aosemi
aon7408.pdf
AON740830V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7408 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18AThis device is suitable for use in general purpose RDS(ON) (at VGS=10V)
9.27. Size:288K aosemi
aon7414.pdf
AON741430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.28. Size:385K aosemi
aon7416.pdf
AON741630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7416 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 40Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
9.29. Size:270K aosemi
aon7406.pdf
AON740630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7406 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25AThis device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)
9.30. Size:163K aosemi
aon7428.pdf
AON742830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7428 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)
9.31. Size:172K aosemi
aon7403.pdf
AON740330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7403 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
9.32. Size:320K aosemi
aon7400a.pdf
AON7400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
9.33. Size:352K aosemi
aon7422e.pdf
AON7422E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.34. Size:259K aosemi
aon7422g.pdf
AON7422G30V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)
9.35. Size:386K aosemi
aon7436.pdf
AON743620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7436 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 23Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.36. Size:147K aosemi
aon7430l.pdf
AON7430LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30VThis device is suitable for high side switch in SMPS and (VGS = 10V)ID = 20Ageneral purpose applications. (VGS = 10V)RDS(ON)
9.37. Size:268K aosemi
aon7450.pdf
AON7450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON7450 is fabricated with SDMOSTM trench ID (at VGS=10V) 21Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
9.38. Size:257K aosemi
aon7418.pdf
AON741830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
9.39. Size:323K aosemi
aon7409.pdf
AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
9.40. Size:247K aosemi
aon7412.pdf
AON741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7412 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 16Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.41. Size:269K aosemi
aon7401.pdf
AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
9.42. Size:274K aosemi
aon7426.pdf
AON742630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7426 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.43. Size:153K aosemi
aon7430.pdf
AON743030V N-Channel MOSFETGeneral Description FeaturesThe AON7430 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.VDS (V) = 30VThis device is suitable for high side switch in SMPS andID = 34A (VGS = 10V)general purpose applications.RDS(ON)
9.44. Size:524K aosemi
aon7458.pdf
AON7458250V,5A N-Channel MOSFETGeneral Description Product SummaryThe AON7458 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of VDS 300V@150performance and robustness in popular AC-DC ID (at VGS=10V) 5Aapplications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)
9.45. Size:506K aosemi
aon7460.pdf
AON7460300V,4A N-Channel MOSFETGeneral Description Product SummaryThe AON7460 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of VDS 350V@150performance and robustness in popular AC-DC ID (at VGS=10V) 4Aapplications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)
9.46. Size:344K aosemi
aon7404g.pdf
AON7404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
9.47. Size:164K aosemi
aon7422l.pdf
AON742230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)
9.48. Size:242K aosemi
aon7407.pdf
AON740720V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AON7407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
9.49. Size:268K aosemi
aon7432.pdf
AON743230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7432 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
9.50. Size:233K aosemi
aon7404.pdf
AON740420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7404 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
9.51. Size:263K aosemi
aon7444.pdf
AON744460V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS60VThe AON7444 is fabricated with SDMOSTM trench ID (at VGS=10V) 33Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
9.52. Size:327K aosemi
aon7466.pdf
AON746630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7466 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
9.53. Size:1620K cn vbsemi
aon7422l.pdf
AON7422Lwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control Industri
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, CS150N03A8
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
History: IPB22N03S4L-15
| LSC65R280HT
| 2SK3700
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