AON7474A. Аналоги и основные параметры
Наименование производителя: AON7474A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 15.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 16 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.5 ns
Cossⓘ - Выходная емкость: 30 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: DFN3X3EP
Аналог (замена) для AON7474A
- подборⓘ MOSFET транзистора по параметрам
AON7474A даташит
aon7474a.pdf
AON7474A 75V N-Channel AlphaMOS General Description Product Summary VDS Trench Power MOSFET technology 75V Low RDS(ON) ID (at VGS=10V) 7.5A Low Gate Charge RDS(ON) (at VGS=10V)
aon7421.pdf
AON7421 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
aon7405.pdf
AON7405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)
aon7423.pdf
AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)
aon7410.pdf
AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON)
aon7408.pdf
AON7408 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A This device is suitable for use in general purpose RDS(ON) (at VGS=10V)
aon7406.pdf
AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)
aon7403.pdf
AON7403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
aon7418.pdf
AON7418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aon7409.pdf
AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
aon7401.pdf
AON7401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
aon7407.pdf
AON7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
aon7446.pdf
AON7446 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON7446 is fabricated with SDMOSTM trench ID (at VGS=10V) 8A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
aon7421.pdf
AON7421 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-10V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
aon7462.pdf
AON7462 300V,2.5A N-Channel MOSFET General Description Product Summary The AON7462 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of 350V@150 VDS performance and robustness in popular AC-DC 2.5A ID (at VGS=10V) applications.By providing low RDS(on), Ciss and Crss along with
aon7400.pdf
AON7400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26A This device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V)
aon7448.pdf
AON7448 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AON7448 is fabricated with SDMOSTM trench ID (at VGS=10V) 24A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
aon7405.pdf
AON7405 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50A This device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)
aon7424.pdf
AON7424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7424 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon7402.pdf
AON7402 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7402 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
aon7442.pdf
AON7442 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aon7452.pdf
AON7452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON7452 is fabricated with SDMOSTM trench ID (at VGS=10V) 5.5A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
aon7440.pdf
AON7440 30V N-Channel MOSFET General Description Product Summary VDS 30V Trench Power technology Low RDS(ON) ID (at VGS=10V) 50A High Current Capability RDS(ON) (at VGS=10V)
aon7423.pdf
AON7423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -50A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)
aon7410.pdf
AON7410 30V N-Channel MOSFET General Description Features The AON7410 uses advanced trench technology and design VDS (V) = 30V to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V) device is suitable for use in DC - DC converters and Load RDS(ON)
aon7408.pdf
AON7408 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18A This device is suitable for use in general purpose RDS(ON) (at VGS=10V)
aon7414.pdf
AON7414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon7416.pdf
AON7416 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7416 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 40A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon7406.pdf
AON7406 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7406 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)
aon7428.pdf
AON7428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7428 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50A This device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)
aon7403.pdf
AON7403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
aon7422e.pdf
AON7422E 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon7422g.pdf
AON7422G 30V N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)
aon7436.pdf
AON7436 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON7436 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 23A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon7430l.pdf
AON7430L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and (VGS = 10V) ID = 20A general purpose applications. (VGS = 10V) RDS(ON)
aon7450.pdf
AON7450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON7450 is fabricated with SDMOSTM trench ID (at VGS=10V) 21A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
aon7400b.pdf
AON7400B 30V N-Channel MOSFET General Description Product Summary VDS Latest Trench Power MOSFET technology 30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V)
aon7418.pdf
AON7418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aon7409.pdf
AON7409 30V P-Channel MOSFET General Description Product Summary VDS The AON7409 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -32A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
aon7412.pdf
AON7412 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7412 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 16A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon7401.pdf
AON7401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35A with a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
aon7426.pdf
AON7426 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon7430.pdf
AON7430 30V N-Channel MOSFET General Description Features The AON7430 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30V This device is suitable for high side switch in SMPS and ID = 34A (VGS = 10V) general purpose applications. RDS(ON)
aon7458.pdf
AON7458 250V,5A N-Channel MOSFET General Description Product Summary The AON7458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 5A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)
aon7460.pdf
AON7460 300V,4A N-Channel MOSFET General Description Product Summary The AON7460 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 350V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 4A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)
aon7404g.pdf
AON7404G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
aon7422l.pdf
AON7422 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40A This device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)
aon7407.pdf
AON7407 20V P-Channel MOSFET General Description Product Summary VDS -20V The AON7407 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=-4.5V) -40A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
aon7432.pdf
AON7432 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7432 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 18A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon7404.pdf
AON7404 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON7404 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 20A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
aon7444.pdf
AON7444 60V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 60V The AON7444 is fabricated with SDMOSTM trench ID (at VGS=10V) 33A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
aon7466.pdf
AON7466 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7466 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
aon7422l.pdf
AON7422L www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Typ. Qg (Typ.) ID (A) TrenchFET Power MOSFET 0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested 30 33.5 nC 0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Motor Control Industri
Другие IGBT... AON7446, AON7448, AON7450, AON7452, AON7458, AON7460, AON7462, AON7466, TK10A60D, AON7502, AON7506, AON7508, AON7510, AON7516, AON7520, AON7522E, AON7524
History: 2SK1248
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