AON7474A - параметры транзистора MOSFET, его аналоги, datasheet

AON7474A Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: AON7474A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 15.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 16 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3.5 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: DFN3X3EP

Аналог (замена) для AON7474A

- подбор MOSFET транзистора по параметрам

AON7474A Datasheet (PDF)

..1. Size:327K aosemi
aon7474a.pdf pdf_icon

AON7474A75V N-Channel AlphaMOSGeneral Description Product SummaryVDS Trench Power MOSFET technology 75V Low RDS(ON) ID (at VGS=10V) 7.5A Low Gate Charge RDS(ON) (at VGS=10V)

9.1. Size:267K 1
aon7421.pdf pdf_icon

AON742120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7421 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

9.2. Size:319K 1
aon7405.pdf pdf_icon

AON740530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)

9.3. Size:465K 1
aon7423.pdf pdf_icon

AON742320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7423 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

9.4. Size:338K 1
aon7410.pdf pdf_icon

AON741030V N-Channel MOSFETGeneral Description FeaturesThe AON7410 uses advanced trench technology and design VDS (V) = 30Vto provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)device is suitable for use in DC - DC converters and Load RDS(ON)

9.5. Size:262K 1
aon7408.pdf pdf_icon

AON740830V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7408 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18AThis device is suitable for use in general purpose RDS(ON) (at VGS=10V)

9.6. Size:270K 1
aon7406.pdf pdf_icon

AON740630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7406 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25AThis device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)

9.7. Size:172K 1
aon7403.pdf pdf_icon

AON740330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7403 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

9.8. Size:320K 1
aon7400a.pdf pdf_icon

AON7400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

9.9. Size:257K 1
aon7418.pdf pdf_icon

AON741830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

9.10. Size:323K 1
aon7409.pdf pdf_icon

AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

9.11. Size:269K 1
aon7401.pdf pdf_icon

AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)

9.12. Size:495K 1
aon7407.pdf pdf_icon

AON740720V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AON7407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)

9.13. Size:265K aosemi
aon7446.pdf pdf_icon

AON744660V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS60VThe AON7446 is fabricated with SDMOSTM trench ID (at VGS=10V) 8Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

9.14. Size:267K aosemi
aon7421.pdf pdf_icon

9.15. Size:297K aosemi
aon7462.pdf pdf_icon

AON7462300V,2.5A N-Channel MOSFETGeneral Description Product SummaryThe AON7462 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of 350V@150 VDSperformance and robustness in popular AC-DC 2.5A ID (at VGS=10V)applications.By providing low RDS(on), Ciss and Crss along with

9.16. Size:199K aosemi
aon7400.pdf pdf_icon

AON740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7400 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26AThis device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V)

9.17. Size:268K aosemi
aon7448.pdf pdf_icon

AON744880V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AON7448 is fabricated with SDMOSTM trench ID (at VGS=10V) 24Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

9.18. Size:319K aosemi
aon7405.pdf pdf_icon

9.19. Size:238K aosemi
aon7424.pdf pdf_icon

AON742430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7424 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.20. Size:301K aosemi
aon7402.pdf pdf_icon

AON740230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7402 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

9.21. Size:253K aosemi
aon7442.pdf pdf_icon

AON744230V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)

9.22. Size:242K aosemi
aon7452.pdf pdf_icon

AON7452100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON7452 is fabricated with SDMOSTM trench ID (at VGS=10V) 5.5Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

9.23. Size:313K aosemi
aon7440.pdf pdf_icon

AON744030V N-Channel MOSFETGeneral Description Product SummaryVDS30V Trench Power technology Low RDS(ON) ID (at VGS=10V) 50A High Current Capability RDS(ON) (at VGS=10V)

9.24. Size:290K aosemi
aon7423.pdf pdf_icon

9.25. Size:338K aosemi
aon7410.pdf pdf_icon

9.26. Size:262K aosemi
aon7408.pdf pdf_icon

9.27. Size:288K aosemi
aon7414.pdf pdf_icon

AON741430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.28. Size:385K aosemi
aon7416.pdf pdf_icon

AON741630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7416 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 40Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)

9.29. Size:270K aosemi
aon7406.pdf pdf_icon

9.30. Size:163K aosemi
aon7428.pdf pdf_icon

AON742830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7428 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

9.31. Size:172K aosemi
aon7403.pdf pdf_icon

9.32. Size:320K aosemi
aon7400a.pdf pdf_icon

9.33. Size:352K aosemi
aon7422e.pdf pdf_icon

AON7422E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.34. Size:259K aosemi
aon7422g.pdf pdf_icon

AON7422G30V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)

9.35. Size:386K aosemi
aon7436.pdf pdf_icon

AON743620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7436 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 23Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.36. Size:147K aosemi
aon7430l.pdf pdf_icon

AON7430LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30VThis device is suitable for high side switch in SMPS and (VGS = 10V)ID = 20Ageneral purpose applications. (VGS = 10V)RDS(ON)

9.37. Size:268K aosemi
aon7450.pdf pdf_icon

AON7450100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AON7450 is fabricated with SDMOSTM trench ID (at VGS=10V) 21Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

9.38. Size:257K aosemi
aon7418.pdf pdf_icon

9.39. Size:323K aosemi
aon7409.pdf pdf_icon

9.40. Size:247K aosemi
aon7412.pdf pdf_icon

AON741230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7412 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 16Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.41. Size:269K aosemi
aon7401.pdf pdf_icon

9.42. Size:274K aosemi
aon7426.pdf pdf_icon

AON742630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7426 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.43. Size:153K aosemi
aon7430.pdf pdf_icon

AON743030V N-Channel MOSFETGeneral Description FeaturesThe AON7430 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.VDS (V) = 30VThis device is suitable for high side switch in SMPS andID = 34A (VGS = 10V)general purpose applications.RDS(ON)

9.44. Size:524K aosemi
aon7458.pdf pdf_icon

AON7458250V,5A N-Channel MOSFETGeneral Description Product SummaryThe AON7458 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of VDS 300V@150performance and robustness in popular AC-DC ID (at VGS=10V) 5Aapplications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)

9.45. Size:506K aosemi
aon7460.pdf pdf_icon

AON7460300V,4A N-Channel MOSFETGeneral Description Product SummaryThe AON7460 is fabricated using an advanced high voltageMOSFET process that is designed to deliver high levels of VDS 350V@150performance and robustness in popular AC-DC ID (at VGS=10V) 4Aapplications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)

9.46. Size:344K aosemi
aon7404g.pdf pdf_icon

AON7404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

9.47. Size:164K aosemi
aon7422l.pdf pdf_icon

AON742230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

9.48. Size:242K aosemi
aon7407.pdf pdf_icon

9.49. Size:268K aosemi
aon7432.pdf pdf_icon

AON743230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7432 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

9.50. Size:233K aosemi
aon7404.pdf pdf_icon

AON740420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7404 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

9.51. Size:263K aosemi
aon7444.pdf pdf_icon

AON744460V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS60VThe AON7444 is fabricated with SDMOSTM trench ID (at VGS=10V) 33Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

9.52. Size:327K aosemi
aon7466.pdf pdf_icon

AON746630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7466 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

9.53. Size:1620K cn vbsemi
aon7422l.pdf pdf_icon

AON7422Lwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARY DefinitionVDS (V) RDS(on) () Typ. Qg (Typ.)ID (A) TrenchFET Power MOSFET0.004 at VGS = 4.5 V 50 100 % Rg and UIS Tested30 33.5 nC0.005 at VGS = 2.5 V 45 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Motor Control Industri

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