AON7702B Todos los transistores

 

AON7702B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AON7702B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 23 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 135 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: DFN3X3EP
 

 Búsqueda de reemplazo de AON7702B MOSFET

   - Selección ⓘ de transistores por parámetros

 

AON7702B Datasheet (PDF)

 ..1. Size:310K  aosemi
aon7702b.pdf pdf_icon

AON7702B

AON7702B30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702B uses advanced trench technology ID (at VGS=10V) 20Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 7.1. Size:157K  aosemi
aon7702a.pdf pdf_icon

AON7702B

AON7702A30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702A uses advanced trench technology ID (at VGS=10V) 36Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 7.2. Size:283K  aosemi
aon7702.pdf pdf_icon

AON7702B

AON770230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702 uses advanced trench technology ID (at VGS=10V) 37Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 8.1. Size:296K  aosemi
aon7700.pdf pdf_icon

AON7702B

AON770030V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7700 uses advanced trench technology ID (at VGS=10V) 40Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

Otros transistores... AON7536 , AON7538 , AON7544 , AON7548 , AON7556 , AON7611 , AON7700 , AON7702A , IRF520 , AON7752 , AON7754 , AON7758 , AON7760 , AON7764 , AON7784 , AON7788 , AON7804 .

History: UTC654 | SVF13N50S | IPB015N08N5 | AM30N08-80D | ME4953-G | CS8N65F

 

 
Back to Top

 


 
.