AON7702B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON7702B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 23 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 135 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Paquete / Cubierta: DFN3X3EP
Búsqueda de reemplazo de AON7702B MOSFET
AON7702B Datasheet (PDF)
aon7702b.pdf
AON7702B30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702B uses advanced trench technology ID (at VGS=10V) 20Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon7702a.pdf
AON7702A30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702A uses advanced trench technology ID (at VGS=10V) 36Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon7702.pdf
AON770230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702 uses advanced trench technology ID (at VGS=10V) 37Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon7700.pdf
AON770030V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7700 uses advanced trench technology ID (at VGS=10V) 40Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
Otros transistores... AON7536 , AON7538 , AON7544 , AON7548 , AON7556 , AON7611 , AON7700 , AON7702A , 75N75 , AON7752 , AON7754 , AON7758 , AON7760 , AON7764 , AON7784 , AON7788 , AON7804 .
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