AON7702B Datasheet and Replacement
Type Designator: AON7702B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 23 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: DFN3X3EP
AON7702B Datasheet (PDF)
aon7702b.pdf

AON7702B30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702B uses advanced trench technology ID (at VGS=10V) 20Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon7702a.pdf

AON7702A30V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702A uses advanced trench technology ID (at VGS=10V) 36Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon7702.pdf

AON770230V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7702 uses advanced trench technology ID (at VGS=10V) 37Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
aon7700.pdf

AON770030V N-Channel MOSFETSRFET TM General Description Product SummaryVDS30VSRFETTM AON7700 uses advanced trench technology ID (at VGS=10V) 40Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
Datasheet: AON7536 , AON7538 , AON7544 , AON7548 , AON7556 , AON7611 , AON7700 , AON7702A , IRF520 , AON7752 , AON7754 , AON7758 , AON7760 , AON7764 , AON7784 , AON7788 , AON7804 .
History: 2SK3029 | CSD16413Q5A
Keywords - AON7702B MOSFET datasheet
AON7702B cross reference
AON7702B equivalent finder
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History: 2SK3029 | CSD16413Q5A



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