AON7900 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON7900

Tipo de FET: MOSFET

Polaridad de transistor: NN

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 17(50) W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 24(40) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 360(830) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.021(0.0067) Ohm

Encapsulados: DFN3.3X3.3A

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AON7900 datasheet

 ..1. Size:348K  aosemi
 aon7900.pdf pdf_icon

AON7900

AON7900 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 Q1 The AON7900 is designed to provide a high efficiency 30V 30V synchronous buck power stage with optimal layout and VDS board space utilization. It includes two specialized 40A ID (at VGS=10V) 24A MOSFETs in a dual Power DFN3.3x3.3 package. The Q1

 8.1. Size:415K  aosemi
 aon7902.pdf pdf_icon

AON7900

AON7902 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON7902 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 27A 40A MOSFETs in a dual Power DFN3.3x3.3A package. The Q1 RDS(ON) (at VGS=10V)

 9.1. Size:546K  1
 aon7934.pdf pdf_icon

AON7900

AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

 9.2. Size:530K  aosemi
 aon7932.pdf pdf_icon

AON7900

AON7932 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON7932 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 26A 35A MOSFETs in a dual Power DFN3x3A package. The Q1 RDS(ON) (at VGS=10V)

MOSTRAR MÁS

Otros transistores... AON7764, AON7784, AON7788, AON7804, AON7810, AON7812, AON7820, AON7826, K2611, AON7902, AON7932, AON7934, AOP605, AOP609, AOT10N60, AOT10N65, AOT10T60P