AON7900 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON7900
   Tipo de FET: MOSFET
   Polaridad de transistor: NN

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 17(50) W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24(40) A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 360(830) pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021(0.0067) Ohm
   Paquete / Cubierta: DFN3.3X3.3A

Búsqueda de reemplazo de MOSFET AON7900

AON7900 Datasheet (PDF)

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aon7900.pdf

AON790030V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2Q1The AON7900 is designed to provide a high efficiency 30V 30Vsynchronous buck power stage with optimal layout and VDSboard space utilization. It includes two specialized 40A ID (at VGS=10V)24AMOSFETs in a dual Power DFN3.3x3.3 package. The Q1

8.1. Size:415K aosemi
aon7902.pdf

AON790230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON7902 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 27A 40AMOSFETs in a dual Power DFN3.3x3.3A package. The Q1 RDS(ON) (at VGS=10V)

9.1. Size:546K 1
aon7934.pdf

AON793430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

9.2. Size:530K aosemi
aon7932.pdf

AON793230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON7932 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 26A 35AMOSFETs in a dual Power DFN3x3A package. The Q1 RDS(ON) (at VGS=10V)

9.3. Size:546K aosemi
aon7934.pdf

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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