Справочник MOSFET. AON7900

 

AON7900 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AON7900
   Тип транзистора: MOSFET
   Полярность: NN
   Pdⓘ - Максимальная рассеиваемая мощность: 17(50) W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 24(40) A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 3 ns
   Cossⓘ - Выходная емкость: 360(830) pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.021(0.0067) Ohm
   Тип корпуса: DFN3.3X3.3A

 Аналог (замена) для AON7900

 

 

AON7900 Datasheet (PDF)

 ..1. Size:348K  aosemi
 aon7900.pdf

AON7900 AON7900

AON790030V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2Q1The AON7900 is designed to provide a high efficiency 30V 30Vsynchronous buck power stage with optimal layout and VDSboard space utilization. It includes two specialized 40A ID (at VGS=10V)24AMOSFETs in a dual Power DFN3.3x3.3 package. The Q1

 8.1. Size:415K  aosemi
 aon7902.pdf

AON7900 AON7900

AON790230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON7902 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 27A 40AMOSFETs in a dual Power DFN3.3x3.3A package. The Q1 RDS(ON) (at VGS=10V)

 9.1. Size:546K  1
 aon7934.pdf

AON7900 AON7900

AON793430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

 9.2. Size:530K  aosemi
 aon7932.pdf

AON7900 AON7900

AON793230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON7932 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 26A 35AMOSFETs in a dual Power DFN3x3A package. The Q1 RDS(ON) (at VGS=10V)

 9.3. Size:546K  aosemi
 aon7934.pdf

AON7900 AON7900

AON793430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)

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