AON7900 PDF and Equivalents Search

 

AON7900 Specs and Replacement


   Type Designator: AON7900
   Type of Transistor: MOSFET
   Type of Control Channel: NN -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 17(50) W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24(40) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 360(830) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021(0.0067) Ohm
   Package: DFN3.3X3.3A
 

 AON7900 substitution

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AON7900 datasheet

 ..1. Size:348K  aosemi
aon7900.pdf pdf_icon

AON7900

AON7900 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q2 Q1 The AON7900 is designed to provide a high efficiency 30V 30V synchronous buck power stage with optimal layout and VDS board space utilization. It includes two specialized 40A ID (at VGS=10V) 24A MOSFETs in a dual Power DFN3.3x3.3 package. The Q1 ... See More ⇒

 8.1. Size:415K  aosemi
aon7902.pdf pdf_icon

AON7900

AON7902 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON7902 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 27A 40A MOSFETs in a dual Power DFN3.3x3.3A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒

 9.1. Size:546K  1
aon7934.pdf pdf_icon

AON7900

AON7934 30V Dual Asymmetric N-Channel AlphaMOS General Description Product Summary Q1 Q2 Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS VDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V) ... See More ⇒

 9.2. Size:530K  aosemi
aon7932.pdf pdf_icon

AON7900

AON7932 30V Dual Asymmetric N-Channel MOSFET General Description Product Summary Q1 Q2 The AON7932 is designed to provide a high efficiency synchronous buck power stage with optimal layout and VDS 30V 30V board space utilization. It includes two specialized ID (at VGS=10V) 26A 35A MOSFETs in a dual Power DFN3x3A package. The Q1 RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON7764 , AON7784 , AON7788 , AON7804 , AON7810 , AON7812 , AON7820 , AON7826 , K2611 , AON7902 , AON7932 , AON7934 , AOP605 , AOP609 , AOT10N60 , AOT10N65 , AOT10T60P .

History: 2SK3904

Keywords - AON7900 MOSFET specs

 AON7900 cross reference
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