AON7900
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON7900
Type of Transistor: MOSFET
Type of Control Channel: NN
-Channel
Pdⓘ
- Maximum Power Dissipation: 17(50)
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 24(40)
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 360(830)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021(0.0067)
Ohm
Package: DFN3.3X3.3A
AON7900
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON7900
Datasheet (PDF)
..1. Size:348K aosemi
aon7900.pdf 
AON790030V Dual Asymmetric N-Channel MOSFETGeneral Description Product Summary Q2Q1The AON7900 is designed to provide a high efficiency 30V 30Vsynchronous buck power stage with optimal layout and VDSboard space utilization. It includes two specialized 40A ID (at VGS=10V)24AMOSFETs in a dual Power DFN3.3x3.3 package. The Q1
8.1. Size:415K aosemi
aon7902.pdf
AON790230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON7902 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 27A 40AMOSFETs in a dual Power DFN3.3x3.3A package. The Q1 RDS(ON) (at VGS=10V)
9.1. Size:546K 1
aon7934.pdf
AON793430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)
9.2. Size:530K aosemi
aon7932.pdf
AON793230V Dual Asymmetric N-Channel MOSFETGeneral Description Product SummaryQ1 Q2The AON7932 is designed to provide a high efficiencysynchronous buck power stage with optimal layout andVDS 30V 30Vboard space utilization. It includes two specialized ID (at VGS=10V) 26A 35AMOSFETs in a dual Power DFN3x3A package. The Q1 RDS(ON) (at VGS=10V)
9.3. Size:546K aosemi
aon7934.pdf
AON793430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 16A 18A High Current Capability RDS(ON) (at VGS=10V)
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