AOT1608L Todos los transistores

 ..1. Size:415K  aosemi
 aot1608l aob1608l.pdf

AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 60V The AOT1608L/AOB1608L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 140A conversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 ..2. Size:415K  aosemi
 aot1608l.pdf

AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 60V The AOT1608L/AOB1608L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 140A conversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 ..3. Size:260K  inchange semiconductor
 aot1608l.pdf

isc N-Channel MOSFET Transistor AOT1608L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 8.1. Size:490K  aosemi
 aotf160a60l aot160a60l aob160a60l.pdf

AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 8.2. Size:404K  aosemi
 aot1606l.pdf

AOT1606L/AOB1606L 60V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 60V The AOT1606L/AOB1606L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 178A conversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 8.3. Size:490K  aosemi
 aot160a60l.pdf

AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 8.4. Size:260K  inchange semiconductor
 aot1606l.pdf

isc N-Channel MOSFET Transistor AOT1606L FEATURES Drain Current I = 178A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos