AOT1608L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOT1608L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 333 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 140 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.7 VQgⓘ - Carga de la puerta: 69 nC
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 721 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0076 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET AOT1608L
AOT1608L Datasheet (PDF)
aot1608l.pdf
AOT1608L/AOB1608L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1608L/AOB1608L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 140Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)
aot1608l.pdf
isc N-Channel MOSFET Transistor AOT1608LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
aot1606l.pdf
AOT1606L/AOB1606L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1606L/AOB1606L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 178Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)
aot160a60l.pdf
AOTF160A60L/AOT160A60L/AOB160A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max
aot1606l.pdf
isc N-Channel MOSFET Transistor AOT1606LFEATURESDrain Current I = 178A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918