All MOSFET. AOT1608L Datasheet

 

AOT1608L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOT1608L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 69 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 721 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: TO-220

 AOT1608L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT1608L Datasheet (PDF)

 ..1. Size:415K  aosemi
aot1608l.pdf

AOT1608L
AOT1608L

AOT1608L/AOB1608L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1608L/AOB1608L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 140Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 ..2. Size:260K  inchange semiconductor
aot1608l.pdf

AOT1608L
AOT1608L

isc N-Channel MOSFET Transistor AOT1608LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 8.1. Size:404K  aosemi
aot1606l.pdf

AOT1608L
AOT1608L

AOT1606L/AOB1606L60V N-Channel Rugged Planar MOSFETGeneral Description Product SummaryVDS60VThe AOT1606L/AOB1606L uses a robust technology thatis designed to provide efficient and reliable power ID (at VGS=10V) 178Aconversion even in the most demanding applications, RDS(ON) (at VGS=10V)

 8.2. Size:490K  aosemi
aot160a60l.pdf

AOT1608L
AOT1608L

AOTF160A60L/AOT160A60L/AOB160A60LTM600V, a MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

 8.3. Size:260K  inchange semiconductor
aot1606l.pdf

AOT1608L
AOT1608L

isc N-Channel MOSFET Transistor AOT1606LFEATURESDrain Current I = 178A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AOT424

 

 
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