AOT1608L MOSFET Datasheet: N-Ch, 60V, 140A. Full specification with pinout and replacement list

AOT1608L Specs and Replacement

   Type Designator: AOT1608L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 721 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
   Package: TO-220

AOT1608L substitution

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AOT1608L datasheet

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AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 60V The AOT1608L/AOB1608L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 140A conversion even in the most demanding applications, RDS(ON) (at VGS=10V) ... See More ⇒

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isc N-Channel MOSFET Transistor AOT1608L FEATURES Drain Current I = 140A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

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AOT1606L/AOB1606L 60V N-Channel Rugged Planar MOSFET General Description Product Summary VDS 60V The AOT1606L/AOB1606L uses a robust technology that is designed to provide efficient and reliable power ID (at VGS=10V) 178A conversion even in the most demanding applications, RDS(ON) (at VGS=10V) ... See More ⇒

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AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒