AOT20N25 Todos los transistores

 ..1. Size:285K  aosemi
 aot20n25.pdf

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150 The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:261K  inchange semiconductor
 aot20n25.pdf

isc N-Channel MOSFET Transistor AOT20N25 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 0.1. Size:285K  aosemi
 aot20n25l.pdf

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150 The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 8.1. Size:383K  aosemi
 aot20n60 aotf20n60.pdf

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.2. Size:540K  aosemi
 aot20n60.pdf

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.3. Size:540K  aosemi
 aot20n60l.pdf

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 8.4. Size:261K  inchange semiconductor
 aot20n60.pdf

isc N-Channel MOSFET Transistor AOT20N60 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos