AOT20N25 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOT20N25
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 208 W
Предельно допустимое напряжение сток-исток (Uds): 250 V
Предельно допустимое напряжение затвор-исток (Ugs): 30 V
Пороговое напряжение включения Ugs(th): 4.5 V
Максимально допустимый постоянный ток стока (Id): 20 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 31 ns
Выходная емкость (Cd): 167 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.17 Ohm
Тип корпуса: TO-220
AOT20N25 Datasheet (PDF)
1.1. aot20n25.pdf 
Size:285K _aosemi
AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche
1.2. aot20n25l.pdf Size:285K _aosemi
AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche
4.1. aot20n60.pdf Size:540K _aosemi
AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo
4.2. aot20n60l.pdf Size:540K _aosemi
AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo
Другие MOSFET... AOT14N50 , AOT14N50FD , AOT15S60 , AOT1606L , AOT1608L , AOT16N50 , AOT1N60 , AOT20C60 , IRFP450 , AOT20N60 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , AOT2500L , AOT254L , AOT25S65 .
Список транзисторов
Обновления
MOSFET: RUS100N02 | RUR040N02TL | RUR040N02FRA | RUR020N02TL | RUQ050N02TR | RUQ050N02FRA | RUM003N02T2L | RUM002N05T2L | RUM002N02T2L | RUM001L02 | RUL035N02TR | RUF025N02TL | RUF015N02TL | RUE003N02TL | RUE002N02TL |