AOT20N25 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT20N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 208 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 31 nS
Drain-Source Capacitance (Cd): 167 pF
Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm
Package: TO-220
AOT20N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT20N25 Datasheet (PDF)
1.1. aot20n25.pdf 
Size:285K _aosemi
AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche
1.2. aot20n25l.pdf Size:285K _aosemi
AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche
4.1. aot20n60.pdf Size:540K _aosemi
AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo
4.2. aot20n60l.pdf Size:540K _aosemi
AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo
Datasheet: AOT14N50 , AOT14N50FD , AOT15S60 , AOT1606L , AOT1608L , AOT16N50 , AOT1N60 , AOT20C60 , IRFP450 , AOT20N60 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , AOT2500L , AOT254L , AOT25S65 .
