All MOSFET. AOT20N25 Datasheet

 

AOT20N25 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT20N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 31 nS

Drain-Source Capacitance (Cd): 167 pF

Maximum Drain-Source On-State Resistance (Rds): 0.17 Ohm

Package: TO-220

AOT20N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AOT20N25 Datasheet (PDF)

1.1. aot20n25.pdf Size:285K _aosemi

AOT20N25
AOT20N25

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.2. aot20n25l.pdf Size:285K _aosemi

AOT20N25
AOT20N25

AOT20N25 250V,20A N-Channel MOSFET General Description Product Summary VDS 300V@150℃ The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.17Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

 4.1. aot20n60.pdf Size:540K _aosemi

AOT20N25
AOT20N25

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

4.2. aot20n60l.pdf Size:540K _aosemi

AOT20N25
AOT20N25

AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 20A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.37Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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