AOT22N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOT22N50
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 417 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 122 nS
Cossⓘ - Capacitancia de salida: 290 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de AOT22N50 MOSFET
AOT22N50 Datasheet (PDF)
aot22n50.pdf
AOT22N50/AOTF22N50500V,22A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT22N50 & AOTF22N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 22Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
aot22n50.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOT22N50FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPopular AC-DC applicationsPower supplySwitching applicationsABS
aot22n50l.pdf
AOT22N50/AOTF22N50500V,22A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT22N50 & AOTF22N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 22Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)
Otros transistores... AOT1608L , AOT16N50 , AOT1N60 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , AON7408 , AOT240L , AOT2500L , AOT254L , AOT25S65 , AOT2606L , AOT2608L , AOT260L , AOT2610L .
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