All MOSFET. AOT22N50 Datasheet

 

AOT22N50 Datasheet and Replacement


   Type Designator: AOT22N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 122 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: TO-220
 

 AOT22N50 substitution

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AOT22N50 Datasheet (PDF)

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AOT22N50

AOT22N50/AOTF22N50500V,22A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT22N50 & AOTF22N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 22Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:205K  inchange semiconductor
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AOT22N50

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOT22N50FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPopular AC-DC applicationsPower supplySwitching applicationsABS

 0.1. Size:534K  aosemi
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AOT22N50

AOT22N50/AOTF22N50500V,22A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT22N50 & AOTF22N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 22Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

Datasheet: AOT1608L , AOT16N50 , AOT1N60 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , STP75NF75 , AOT240L , AOT2500L , AOT254L , AOT25S65 , AOT2606L , AOT2608L , AOT260L , AOT2610L .

History: BUK7524-55A

Keywords - AOT22N50 MOSFET datasheet

 AOT22N50 cross reference
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