All MOSFET. AOT22N50 Datasheet

 

AOT22N50 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT22N50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 417 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 22 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 122 nS

Drain-Source Capacitance (Cd): 290 pF

Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm

Package: TO-220

AOT22N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOT22N50 Datasheet (PDF)

1.1. aot22n50.pdf Size:534K _aosemi

AOT22N50
AOT22N50

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.2. aot22n50l.pdf Size:534K _aosemi

AOT22N50
AOT22N50

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

Datasheet: AOT1608L , AOT16N50 , AOT1N60 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , 2N5484 , AOT240L , AOT2500L , AOT254L , AOT25S65 , AOT2606L , AOT2608L , AOT260L , AOT2610L .

 


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