AOT22N50 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT22N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 417 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 22 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 69 nC
Rise Time (tr): 122 nS
Drain-Source Capacitance (Cd): 290 pF
Maximum Drain-Source On-State Resistance (Rds): 0.26 Ohm
Package: TO-220
AOT22N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT22N50 Datasheet (PDF)
1.1. aot22n50.pdf 
Size:534K _aosemi
AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo
1.2. aot22n50l.pdf Size:534K _aosemi
AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo
Datasheet: AOT1608L , AOT16N50 , AOT1N60 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , 2N5484 , AOT240L , AOT2500L , AOT254L , AOT25S65 , AOT2606L , AOT2608L , AOT260L , AOT2610L .
