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AOT2500L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT2500L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 152 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 586 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO-220

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AOT2500L Datasheet (PDF)

 ..1. Size:297K  aosemi
aot2500l.pdf

AOT2500L
AOT2500L

AOT2500L/AOB2500L150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 ..2. Size:259K  inchange semiconductor
aot2500l.pdf

AOT2500L
AOT2500L

isc N-Channel MOSFET Transistor AOT2500LFEATURESDrain Current I = 152A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 8.1. Size:636K  aosemi
aot2502l aob2502l.pdf

AOT2500L
AOT2500L

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:334K  aosemi
aot2502l.pdf

AOT2500L
AOT2500L

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:259K  inchange semiconductor
aot2502l.pdf

AOT2500L
AOT2500L

isc N-Channel MOSFET Transistor AOT2502LFEATURESDrain Current I = 106A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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