AOT2500L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOT2500L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 375 W
Предельно допустимое напряжение сток-исток (Uds): 150 V
Предельно допустимое напряжение затвор-исток (Ugs): 20 V
Пороговое напряжение включения Ugs(th): 3.5 V
Максимально допустимый постоянный ток стока (Id): 152 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 586 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0065 Ohm
Тип корпуса: TO-220
AOT2500L Datasheet (PDF)
1.1. aot2500l.pdf 
Size:297K _aosemi
AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary VDS The AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) efficient high frequency switching performance. Both RDS(ON) (at VGS=6V) < 7.6mΩ (<7.3mΩ∗) conduction and switching power losse
4.1. aot2502l.pdf Size:334K _aosemi
AOT2502L/AOB2502L 150V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology 150V • Low RDS(ON) ID (at VGS=10V) 106A • Low Gate Charge RDS(ON) (at VGS=10V) < 11mΩ (10.7mΩ*) • Optimized for fast-switching applications Applications 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Indust
5.1. aot25s65.pdf Size:311K _aosemi
AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19Ω performance and robustness in switching applications. Qg,typ 26.4nC By provi
5.2. aot25s65l.pdf Size:311K _aosemi
AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19Ω performance and robustness in switching applications. Qg,typ 26.4nC By provi
5.3. aot254l.pdf Size:306K _aosemi
AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 32A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 46mΩ conduction and switching power losses are minimized RDS(ON) (at VGS =4.5V) < 53mΩ due to an extre
Другие MOSFET... AOT1N60 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , IRF150 , AOT254L , AOT25S65 , AOT2606L , AOT2608L , AOT260L , AOT2610L , AOT2618L , AOT262L .
Список транзисторов
Обновления
MOSFET: RUS100N02 | RUR040N02TL | RUR040N02FRA | RUR020N02TL | RUQ050N02TR | RUQ050N02FRA | RUM003N02T2L | RUM002N05T2L | RUM002N02T2L | RUM001L02 | RUL035N02TR | RUF025N02TL | RUF015N02TL | RUE003N02TL | RUE002N02TL |