AOT2500L Datasheet. Specs and Replacement

Type Designator: AOT2500L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 152 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 586 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-220

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AOT2500L datasheet

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AOT2500L

AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary VDS The AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) ... See More ⇒

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AOT2500L

AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary VDS The AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V) ... See More ⇒

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AOT2500L

isc N-Channel MOSFET Transistor AOT2500L FEATURES Drain Current I = 152A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

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 aot2502l aob2502l.pdf pdf_icon

AOT2500L

AOT2502L/AOB2502L 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

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Detailed specifications: AOT1N60, AOT20C60, AOT20N25, AOT20N60, AOT20S60, AOT210L, AOT22N50, AOT240L, IRFP250N, AOT254L, AOT25S65, AOT2606L, AOT2608L, AOT260L, AOT2610L, AOT2618L, AOT262L

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