All MOSFET. AOT2500L Datasheet

 

AOT2500L Datasheet and Replacement


   Type Designator: AOT2500L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 152 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 586 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO-220
 

 AOT2500L substitution

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AOT2500L Datasheet (PDF)

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AOT2500L

AOT2500L/AOB2500L150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 ..2. Size:259K  inchange semiconductor
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AOT2500L

isc N-Channel MOSFET Transistor AOT2500LFEATURESDrain Current I = 152A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 8.1. Size:636K  aosemi
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AOT2500L

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:334K  aosemi
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AOT2500L

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

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Datasheet: AOT1N60 , AOT20C60 , AOT20N25 , AOT20N60 , AOT20S60 , AOT210L , AOT22N50 , AOT240L , IRF9540 , AOT254L , AOT25S65 , AOT2606L , AOT2608L , AOT260L , AOT2610L , AOT2618L , AOT262L .

Keywords - AOT2500L MOSFET datasheet

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 AOT2500L equivalent finder
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