AOT404 Todos los transistores

 

AOT404 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT404
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 105 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.2 nS
   Cossⓘ - Capacitancia de salida: 204 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de MOSFET AOT404

 

AOT404 Datasheet (PDF)

 ..1. Size:109K  aosemi
aot404.pdf

AOT404
AOT404

AOT404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT404 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)

 ..2. Size:261K  inchange semiconductor
aot404.pdf

AOT404
AOT404

isc N-Channel MOSFET Transistor AOT404FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:66K  aosemi
aot402.pdf

AOT404
AOT404

AOT402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT402 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

 9.2. Size:67K  aosemi
aot400.pdf

AOT404
AOT404

AOT400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT400 uses advanced trench technology and VDS (V) = 75Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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