AOT404 MOSFET: N-Ch, 105V, 40A. Full datasheet with pinout, specifications and replacement transistor list

AOT404 Datasheet (PDF)

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AOT404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT404 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)

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isc N-Channel MOSFET Transistor AOT404FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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AOT402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT402 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

9.2. Size:67K aosemi
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AOT400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT400 uses advanced trench technology and VDS (V) = 75Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

Datasheet: AOT292L , AOT296L , AOT298L , AOT29S50 , AOT2N60 , AOT3N100 , AOT3N50 , AOT3N60 , AO4407 , AOT410L , AOT412 , AOT414 , AOT416 , AOT418L , AOT424 , AOT42S60 , AOT430 .