AOT404
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT404
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 105
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 40
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 38.5
nC
trⓘ - Rise Time: 8.2
nS
Cossⓘ -
Output Capacitance: 204
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
TO-220
AOT404
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT404
Datasheet (PDF)
..1. Size:109K aosemi
aot404.pdf
AOT404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT404 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)
..2. Size:261K inchange semiconductor
aot404.pdf
isc N-Channel MOSFET Transistor AOT404FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:66K aosemi
aot402.pdf
AOT402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT402 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)
9.2. Size:67K aosemi
aot400.pdf
AOT400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT400 uses advanced trench technology and VDS (V) = 75Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)
Datasheet: IRFP360LC
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