AOT404 - параметры транзистора MOSFET, его аналоги, datasheet

AOT404 Datasheet (PDF)

..1. Size:109K aosemi
aot404.pdf pdf_icon

AOT404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT404 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)

..2. Size:261K inchange semiconductor
aot404.pdf pdf_icon

isc N-Channel MOSFET Transistor AOT404FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.1. Size:66K aosemi
aot402.pdf pdf_icon

AOT402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT402 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

9.2. Size:67K aosemi
aot400.pdf pdf_icon

AOT400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT400 uses advanced trench technology and VDS (V) = 75Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

Другие MOSFET... AOT292L , AOT296L , AOT298L , AOT29S50 , AOT2N60 , AOT3N100 , AOT3N50 , AOT3N60 , P60NF06 , AOT410L , AOT412 , AOT414 , AOT416 , AOT418L , AOT424 , AOT42S60 , AOT430 .