AOT430 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT430

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 268 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: TO-220

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AOT430 datasheet

 ..1. Size:75K  aosemi
aot430.pdf pdf_icon

AOT430

AOT430 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT430 uses advanced trench technology and VDS (V) = 75V design to provide excellent RDS(ON) with low gate ID = 80 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 ..2. Size:839K  cn vbsemi
aot430.pdf pdf_icon

AOT430

AOT430 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Backlighti

 ..3. Size:260K  inchange semiconductor
aot430.pdf pdf_icon

AOT430

isc N-Channel MOSFET Transistor AOT430 FEATURES Drain Current I =80A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

Otros transistores... AOT404, AOT410L, AOT412, AOT414, AOT416, AOT418L, AOT424, AOT42S60, RFP50N06, AOT440, AOT460, AOT462L, AOT466L, AOT470, AOT472, AOT474, AOT480L