AOT430 PDF and Equivalents Search

 

AOT430 Specs and Replacement

Type Designator: AOT430

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 268 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO-220

AOT430 substitution

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AOT430 datasheet

 ..1. Size:75K  aosemi
 aot430.pdf pdf_icon

AOT430

AOT430 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT430 uses advanced trench technology and VDS (V) = 75V design to provide excellent RDS(ON) with low gate ID = 80 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) ... See More ⇒

 ..2. Size:839K  cn vbsemi
 aot430.pdf pdf_icon

AOT430

AOT430 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Backlighti... See More ⇒

 ..3. Size:260K  inchange semiconductor
 aot430.pdf pdf_icon

AOT430

isc N-Channel MOSFET Transistor AOT430 FEATURES Drain Current I =80A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

Detailed specifications: AOT404 , AOT410L , AOT412 , AOT414 , AOT416 , AOT418L , AOT424 , AOT42S60 , RFP50N06 , AOT440 , AOT460 , AOT462L , AOT466L , AOT470 , AOT472 , AOT474 , AOT480L .

Keywords - AOT430 MOSFET specs

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