All MOSFET. AOT430 Datasheet


AOT430 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT430

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 268 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 114 nC

Rise Time (tr): 39 nS

Drain-Source Capacitance (Cd): 400 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0115 Ohm

Package: TO-220

AOT430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


AOT430 Datasheet (PDF)

1.1. aot430.pdf Size:75K _aosemi


AOT430 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOT430 uses advanced trench technology and VDS (V) = 75V design to provide excellent RDS(ON) with low gate ID = 80 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) < 11.5mΩ (VGS = 10V) switching and general purpose applications. Standard Product AOT430 is Pb-free (m

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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