AOT4N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT4N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 28.7 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO-220

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AOT4N60 Datasheet (PDF)

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aot4n60.pdf

AOT4N60/AOTF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

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aot4n60 aotf4n60 aotf4n60l.pdf

AOT4N60/AOTF4N60/AOTF4N60L600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 & AOTF4N60L have beenfabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4Athat is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

..3. Size:261K inchange semiconductor
aot4n60.pdf

isc N-Channel MOSFET Transistor AOT4N60FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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