AOT4N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT4N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28.7 nS

Cossⓘ - Capacitancia de salida: 51 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm

Encapsulados: TO-220

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AOT4N60 datasheet

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 aot4n60.pdf pdf_icon

AOT4N60

AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

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 aot4n60 aotf4n60 aotf4n60l.pdf pdf_icon

AOT4N60

AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4A that is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..3. Size:261K  inchange semiconductor
 aot4n60.pdf pdf_icon

AOT4N60

isc N-Channel MOSFET Transistor AOT4N60 FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =2.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

Otros transistores... AOT460, AOT462L, AOT466L, AOT470, AOT472, AOT474, AOT480L, AOT482L, 8N60, AOT4S60, AOT500, AOT502, AOT5N100, AOT5N50, AOT5N60, AOT7N60, AOT7N65