AOT4N60 Specs and Replacement
Type Designator: AOT4N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28.7 nS
Cossⓘ - Output Capacitance: 51 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: TO-220
AOT4N60 substitution
- MOSFET ⓘ Cross-Reference Search
AOT4N60 datasheet
aot4n60.pdf
AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aot4n60 aotf4n60 aotf4n60l.pdf
AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4A that is designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aot4n60.pdf
isc N-Channel MOSFET Transistor AOT4N60 FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =2.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒
Detailed specifications: AOT460, AOT462L, AOT466L, AOT470, AOT472, AOT474, AOT480L, AOT482L, 8N60, AOT4S60, AOT500, AOT502, AOT5N100, AOT5N50, AOT5N60, AOT7N60, AOT7N65
Keywords - AOT4N60 MOSFET specs
AOT4N60 cross reference
AOT4N60 equivalent finder
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AOT4N60 substitution
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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