All MOSFET. AOT4N60 Datasheet

 

AOT4N60 Datasheet and Replacement


   Type Designator: AOT4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28.7 nS
   Cossⓘ - Output Capacitance: 51 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
   Package: TO-220
 

 AOT4N60 substitution

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AOT4N60 Datasheet (PDF)

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AOT4N60

AOT4N60/AOTF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:651K  aosemi
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AOT4N60

AOT4N60/AOTF4N60/AOTF4N60L600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 & AOTF4N60L have beenfabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4Athat is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..3. Size:261K  inchange semiconductor
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AOT4N60

isc N-Channel MOSFET Transistor AOT4N60FEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Datasheet: AOT460 , AOT462L , AOT466L , AOT470 , AOT472 , AOT474 , AOT480L , AOT482L , K2611 , AOT4S60 , AOT500 , AOT502 , AOT5N100 , AOT5N50 , AOT5N60 , AOT7N60 , AOT7N65 .

History: AOT7S65 | H2N65D

Keywords - AOT4N60 MOSFET datasheet

 AOT4N60 cross reference
 AOT4N60 equivalent finder
 AOT4N60 lookup
 AOT4N60 substitution
 AOT4N60 replacement

 

 
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