AOT4S60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOT4S60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 83 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.1 V
Carga de la puerta (Qg): 6 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 21 pF
Resistencia entre drenaje y fuente RDS(on): 0.9 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET AOT4S60
AOT4S60 Datasheet (PDF)
aot4s60.pdf
AOT4S60/AOB4S60/AOTF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT4S60 & AOB4S60 & AOTF4S60 have beenfabricated using the advanced MOSTM high voltage IDM 16Aprocess that is designed to deliver high levels of RDS(ON),max 0.9performance and robustness in switching applications. Qg,typ 6nCBy providing low RDS
aot4s60.pdf
isc N-Channel MOSFET Transistor AOT4S60FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aot4s60l.pdf
AOT4S60/AOB4S60/AOTF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT4S60 & AOB4S60 & AOTF4S60 have beenfabricated using the advanced MOSTM high voltage IDM 16Aprocess that is designed to deliver high levels of RDS(ON),max 0.9performance and robustness in switching applications. Qg,typ 6nCBy providing low RDS
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
