AOT4S60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT4S60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 21 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: TO-220

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AOT4S60 datasheet

 ..1. Size:296K  aosemi
 aot4s60 aob4s60 aotf4s60.pdf pdf_icon

AOT4S60

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 ..2. Size:296K  aosemi
 aot4s60.pdf pdf_icon

AOT4S60

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 ..3. Size:262K  inchange semiconductor
 aot4s60.pdf pdf_icon

AOT4S60

isc N-Channel MOSFET Transistor AOT4S60 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 0.1. Size:296K  aosemi
 aot4s60l.pdf pdf_icon

AOT4S60

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

MOSTRAR MÁS

Otros transistores... AOT462L, AOT466L, AOT470, AOT472, AOT474, AOT480L, AOT482L, AOT4N60, P60NF06, AOT500, AOT502, AOT5N100, AOT5N50, AOT5N60, AOT7N60, AOT7N65, AOT7N70