AOT4S60. Аналоги и основные параметры

Наименование производителя: AOT4S60

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8 ns

Cossⓘ - Выходная емкость: 21 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT4S60

- подборⓘ MOSFET транзистора по параметрам

 

AOT4S60 даташит

 ..1. Size:296K  aosemi
 aot4s60 aob4s60 aotf4s60.pdf pdf_icon

AOT4S60

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 ..2. Size:296K  aosemi
 aot4s60.pdf pdf_icon

AOT4S60

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

 ..3. Size:262K  inchange semiconductor
 aot4s60.pdf pdf_icon

AOT4S60

isc N-Channel MOSFET Transistor AOT4S60 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 0.1. Size:296K  aosemi
 aot4s60l.pdf pdf_icon

AOT4S60

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AOT462L, AOT466L, AOT470, AOT472, AOT474, AOT480L, AOT482L, AOT4N60, P60NF06, AOT500, AOT502, AOT5N100, AOT5N50, AOT5N60, AOT7N60, AOT7N65, AOT7N70