AOT4S60 Specs and Replacement

Type Designator: AOT4S60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220

AOT4S60 substitution

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AOT4S60 datasheet

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 aot4s60 aob4s60 aotf4s60.pdf pdf_icon

AOT4S60

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS... See More ⇒

 ..2. Size:296K  aosemi
 aot4s60.pdf pdf_icon

AOT4S60

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS... See More ⇒

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 aot4s60.pdf pdf_icon

AOT4S60

isc N-Channel MOSFET Transistor AOT4S60 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a... See More ⇒

 0.1. Size:296K  aosemi
 aot4s60l.pdf pdf_icon

AOT4S60

AOT4S60/AOB4S60/AOTF4S60 TM 600V 4A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced MOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9 performance and robustness in switching applications. Qg,typ 6nC By providing low RDS... See More ⇒

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Detailed specifications: AOT462L, AOT466L, AOT470, AOT472, AOT474, AOT480L, AOT482L, AOT4N60, P60NF06, AOT500, AOT502, AOT5N100, AOT5N50, AOT5N60, AOT7N60, AOT7N65, AOT7N70

Keywords - AOT4S60 MOSFET specs

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