All MOSFET. AOT4S60 Datasheet

 

AOT4S60 Datasheet and Replacement


   Type Designator: AOT4S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.1 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 6 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-220
 

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AOT4S60 Datasheet (PDF)

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AOT4S60

AOT4S60/AOB4S60/AOTF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT4S60 & AOB4S60 & AOTF4S60 have beenfabricated using the advanced MOSTM high voltage IDM 16Aprocess that is designed to deliver high levels of RDS(ON),max 0.9performance and robustness in switching applications. Qg,typ 6nCBy providing low RDS

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AOT4S60

isc N-Channel MOSFET Transistor AOT4S60FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 0.1. Size:296K  aosemi
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AOT4S60

AOT4S60/AOB4S60/AOTF4S60TM600V 4A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT4S60 & AOB4S60 & AOTF4S60 have beenfabricated using the advanced MOSTM high voltage IDM 16Aprocess that is designed to deliver high levels of RDS(ON),max 0.9performance and robustness in switching applications. Qg,typ 6nCBy providing low RDS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - AOT4S60 MOSFET datasheet

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