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AOT500 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT500
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 115 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 33 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 765 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm
   Paquete / Cubierta: TO-220
 

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AOT500 Datasheet (PDF)

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AOT500

AOT500LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesAOT500 uses an optimally designed temperaturecompensated gate-drain zener clamp. Under overvoltage VDS (V) = Clampedconditions, the clamp activates and turns on the MOSFET,ID = 80A (VGS = 10V)safely dissipating the energy in the MOSFET.RDS(ON)

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AOT500

AOT502Clamped N-Channel MOSFETGeneral Description Product SummaryVDSClampedAOT502 uses an optimally designed temperature 60A ID (at VGS=10V)compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET,

 9.2. Size:261K  inchange semiconductor
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AOT500

isc N-Channel MOSFET Transistor AOT502FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =33V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... AOT466L , AOT470 , AOT472 , AOT474 , AOT480L , AOT482L , AOT4N60 , AOT4S60 , IRF520 , AOT502 , AOT5N100 , AOT5N50 , AOT5N60 , AOT7N60 , AOT7N65 , AOT7N70 , AOT7S60 .

History: IRFP254N | 2SK3522N | AP9585GM-HF | NCEP020N60GU

 

 
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