AOT500 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT500

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 115 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 33 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 765 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0053 Ohm

Encapsulados: TO-220

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AOT500 datasheet

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AOT500

AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage VDS (V) = Clamped conditions, the clamp activates and turns on the MOSFET, ID = 80A (VGS = 10V) safely dissipating the energy in the MOSFET. RDS(ON)

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AOT500

AOT502 Clamped N-Channel MOSFET General Description Product Summary VDS Clamped AOT502 uses an optimally designed temperature 60A ID (at VGS=10V) compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET,

 9.2. Size:261K  inchange semiconductor
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AOT500

isc N-Channel MOSFET Transistor AOT502 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V =33V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

Otros transistores... AOT466L, AOT470, AOT472, AOT474, AOT480L, AOT482L, AOT4N60, AOT4S60, 75N75, AOT502, AOT5N100, AOT5N50, AOT5N60, AOT7N60, AOT7N65, AOT7N70, AOT7S60