AOT500 MOSFET. Datasheet pdf. Equivalent
Type Designator: AOT500
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 69 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 765 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO-220
AOT500 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOT500 Datasheet (PDF)
aot500.pdf
AOT500LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesAOT500 uses an optimally designed temperaturecompensated gate-drain zener clamp. Under overvoltage VDS (V) = Clampedconditions, the clamp activates and turns on the MOSFET,ID = 80A (VGS = 10V)safely dissipating the energy in the MOSFET.RDS(ON)
aot502.pdf
AOT502Clamped N-Channel MOSFETGeneral Description Product SummaryVDSClampedAOT502 uses an optimally designed temperature 60A ID (at VGS=10V)compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET,
aot502.pdf
isc N-Channel MOSFET Transistor AOT502FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =33V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NP48N055CLE
History: NP48N055CLE
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