AOT500 Specs and Replacement

Type Designator: AOT500

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 765 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: TO-220

AOT500 substitution

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AOT500 datasheet

 ..1. Size:448K  aosemi
 aot500.pdf pdf_icon

AOT500

AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage VDS (V) = Clamped conditions, the clamp activates and turns on the MOSFET, ID = 80A (VGS = 10V) safely dissipating the energy in the MOSFET. RDS(ON) ... See More ⇒

 9.1. Size:315K  aosemi
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AOT500

AOT502 Clamped N-Channel MOSFET General Description Product Summary VDS Clamped AOT502 uses an optimally designed temperature 60A ID (at VGS=10V) compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, ... See More ⇒

 9.2. Size:261K  inchange semiconductor
 aot502.pdf pdf_icon

AOT500

isc N-Channel MOSFET Transistor AOT502 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V =33V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

Detailed specifications: AOT466L, AOT470, AOT472, AOT474, AOT480L, AOT482L, AOT4N60, AOT4S60, 75N75, AOT502, AOT5N100, AOT5N50, AOT5N60, AOT7N60, AOT7N65, AOT7N70, AOT7S60

Keywords - AOT500 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs