AOT500 Datasheet and Replacement
Type Designator: AOT500
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 765 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: TO-220
AOT500 substitution
AOT500 Datasheet (PDF)
aot500.pdf
AOT500LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesAOT500 uses an optimally designed temperaturecompensated gate-drain zener clamp. Under overvoltage VDS (V) = Clampedconditions, the clamp activates and turns on the MOSFET,ID = 80A (VGS = 10V)safely dissipating the energy in the MOSFET.RDS(ON)
aot502.pdf
AOT502Clamped N-Channel MOSFETGeneral Description Product SummaryVDSClampedAOT502 uses an optimally designed temperature 60A ID (at VGS=10V)compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET,
aot502.pdf
isc N-Channel MOSFET Transistor AOT502FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =33V(Min)DSSStatic Drain-Source On-Resistance: R = 11.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: AOT466L , AOT470 , AOT472 , AOT474 , AOT480L , AOT482L , AOT4N60 , AOT4S60 , 75N75 , AOT502 , AOT5N100 , AOT5N50 , AOT5N60 , AOT7N60 , AOT7N65 , AOT7N70 , AOT7S60 .
History: RU30100R | 2SJ580 | PJU1NA60 | SSF3314E | CMLDM7002AJ | 6N65KG-TF1-T | TK10J80E
Keywords - AOT500 MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: RU30100R | 2SJ580 | PJU1NA60 | SSF3314E | CMLDM7002AJ | 6N65KG-TF1-T | TK10J80E
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