AOT502 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT502

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 79 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 33 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.5 nS

Cossⓘ - Capacitancia de salida: 266 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0115 Ohm

Encapsulados: TO-220

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AOT502 datasheet

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AOT502

AOT502 Clamped N-Channel MOSFET General Description Product Summary VDS Clamped AOT502 uses an optimally designed temperature 60A ID (at VGS=10V) compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET,

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AOT502

isc N-Channel MOSFET Transistor AOT502 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V =33V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

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AOT502

AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage VDS (V) = Clamped conditions, the clamp activates and turns on the MOSFET, ID = 80A (VGS = 10V) safely dissipating the energy in the MOSFET. RDS(ON)

Otros transistores... AOT470, AOT472, AOT474, AOT480L, AOT482L, AOT4N60, AOT4S60, AOT500, AO3400A, AOT5N100, AOT5N50, AOT5N60, AOT7N60, AOT7N65, AOT7N70, AOT7S60, AOT7S65