AOT502 Specs and Replacement

Type Designator: AOT502

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 79 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 33 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.5 nS

Cossⓘ - Output Capacitance: 266 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO-220

AOT502 substitution

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AOT502 datasheet

 ..1. Size:315K  aosemi
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AOT502

AOT502 Clamped N-Channel MOSFET General Description Product Summary VDS Clamped AOT502 uses an optimally designed temperature 60A ID (at VGS=10V) compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, ... See More ⇒

 ..2. Size:261K  inchange semiconductor
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AOT502

isc N-Channel MOSFET Transistor AOT502 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V =33V(Min) DSS Static Drain-Source On-Resistance R = 11.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

 9.1. Size:448K  aosemi
 aot500.pdf pdf_icon

AOT502

AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage VDS (V) = Clamped conditions, the clamp activates and turns on the MOSFET, ID = 80A (VGS = 10V) safely dissipating the energy in the MOSFET. RDS(ON) ... See More ⇒

Detailed specifications: AOT470, AOT472, AOT474, AOT480L, AOT482L, AOT4N60, AOT4S60, AOT500, AO3400A, AOT5N100, AOT5N50, AOT5N60, AOT7N60, AOT7N65, AOT7N70, AOT7S60, AOT7S65

Keywords - AOT502 MOSFET specs

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