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AOT8N80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOT8N80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 245 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 7.4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 51 nS

Conductancia de drenaje-sustrato (Cd): 101 pF

Resistencia drenaje-fuente RDS(on): 1.63 Ohm

Empaquetado / Estuche: TO-220

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AOT8N80 Datasheet (PDF)

1.1. aot8n80.pdf Size:349K _aosemi

AOT8N80
AOT8N80

AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary VDS 900V@150℃ The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.63Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alon

5.1. aot8n60.pdf Size:441K _aosemi

AOT8N80
AOT8N80

AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.9Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

5.2. aot8n65.pdf Size:154K _aosemi

AOT8N80
AOT8N80

AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.15Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

 5.3. aot8n50.pdf Size:159K _aosemi

AOT8N80
AOT8N80

AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.85Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along w

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