Справочник MOSFET. AOT8N80

 

AOT8N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT8N80
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 245 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 51 ns
   Cossⓘ - Выходная емкость: 101 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.63 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AOT8N80

 

 

AOT8N80 Datasheet (PDF)

 ..1. Size:349K  aosemi
 aot8n80.pdf

AOT8N80 AOT8N80

AOT8N80/AOTF8N80800V, 7.4A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOT8N80 & AOTF8N80 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.1. Size:441K  aosemi
 aot8n60.pdf

AOT8N80 AOT8N80

AOT8N60/AOTF8N60600V,8A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT8N60 & AOTF8N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.2. Size:159K  aosemi
 aot8n50.pdf

AOT8N80 AOT8N80

AOT8N50/AOTF8N50500V, 8A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.3. Size:154K  aosemi
 aot8n65.pdf

AOT8N80 AOT8N80

AOT8N65/AOTF8N65650V, 8A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT8N65 & AOTF8N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.4. Size:276K  aosemi
 aot8n50 aotf8n50.pdf

AOT8N80 AOT8N80

AOT8N50/AOTF8N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 9.5. Size:262K  inchange semiconductor
 aot8n60.pdf

AOT8N80 AOT8N80

isc N-Channel MOSFET Transistor AOT8N60FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.6. Size:261K  inchange semiconductor
 aot8n50.pdf

AOT8N80 AOT8N80

isc N-Channel MOSFET Transistor AOT8N50FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.7. Size:261K  inchange semiconductor
 aot8n65.pdf

AOT8N80 AOT8N80

isc N-Channel MOSFET Transistor AOT8N65FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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