AOT8N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOT8N80
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 245 W
Предельно допустимое напряжение сток-исток (Uds): 800 V
Предельно допустимое напряжение затвор-исток (Ugs): 30 V
Максимально допустимый постоянный ток стока (Id): 7.4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 51 ns
Выходная емкость (Cd): 101 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.63 Ohm
Тип корпуса: TO-220
AOT8N80 Datasheet (PDF)
1.1. aot8n80.pdf 
Size:349K _aosemi
AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary VDS 900V@150℃ The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.63Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alon
5.1. aot8n60.pdf Size:441K _aosemi
AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.9Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit
5.2. aot8n65.pdf Size:154K _aosemi
AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.15Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along
5.3. aot8n50.pdf Size:159K _aosemi
AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.85Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along w
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