Справочник MOSFET. AOT8N80

 

AOT8N80 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT8N80

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 245 W

Предельно допустимое напряжение сток-исток (Uds): 800 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 7.4 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 51 ns

Выходная емкость (Cd): 101 pf

Сопротивление сток-исток открытого транзистора (Rds): 1.63 Ohm

Тип корпуса: TO-220

Аналог (замена) для AOT8N80

 

 

AOT8N80 Datasheet (PDF)

1.1. aot8n80.pdf Size:349K _aosemi

AOT8N80
AOT8N80

AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary VDS 900V@150℃ The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.63Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alon

5.1. aot8n60.pdf Size:441K _aosemi

AOT8N80
AOT8N80

AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.9Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

5.2. aot8n65.pdf Size:154K _aosemi

AOT8N80
AOT8N80

AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.15Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

 5.3. aot8n50.pdf Size:159K _aosemi

AOT8N80
AOT8N80

AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.85Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along w

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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