All MOSFET. AOT8N80 Datasheet

 

AOT8N80 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOT8N80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 245 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7.4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 51 nS

Drain-Source Capacitance (Cd): 101 pF

Maximum Drain-Source On-State Resistance (Rds): 1.63 Ohm

Package: TO-220

AOT8N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AOT8N80 Datasheet (PDF)

1.1. aot8n80.pdf Size:349K _aosemi

AOT8N80
AOT8N80

AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary VDS 900V@150℃ The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.63Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alon

5.1. aot8n65.pdf Size:154K _aosemi

AOT8N80
AOT8N80

AOT8N65/AOTF8N65 650V, 8A N-Channel MOSFET General Description Product Summary VDS 750V@150℃ The AOT8N65 & AOTF8N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.15Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along

5.2. aot8n60.pdf Size:441K _aosemi

AOT8N80
AOT8N80

AOT8N60/AOTF8N60 600V,8A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT8N60 & AOTF8N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.9Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wit

 5.3. aot8n50.pdf Size:159K _aosemi

AOT8N80
AOT8N80

AOT8N50/AOTF8N50 500V, 8A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT8N50 & AOTF8N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 8A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.85Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along w

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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