AOT8N80 Datasheet and Replacement. Cross Reference Search

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AOT8N80/AOTF8N80800V, 7.4A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOT8N80 & AOTF8N80 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

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AOT8N60/AOTF8N60600V,8A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT8N60 & AOTF8N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.2. Size:159K aosemi
aot8n50.pdf pdf_icon

AOT8N50/AOTF8N50500V, 8A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.3. Size:154K aosemi
aot8n65.pdf pdf_icon

AOT8N65/AOTF8N65650V, 8A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT8N65 & AOTF8N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

9.4. Size:276K aosemi
aot8n50 aotf8n50.pdf pdf_icon

AOT8N50/AOTF8N50500V, 9A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT8N50 & AOTF8N50 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 9Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

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aot8n60.pdf pdf_icon

isc N-Channel MOSFET Transistor AOT8N60FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.6. Size:261K inchange semiconductor
aot8n50.pdf pdf_icon

isc N-Channel MOSFET Transistor AOT8N50FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.7. Size:261K inchange semiconductor
aot8n65.pdf pdf_icon

isc N-Channel MOSFET Transistor AOT8N65FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

AOT8N80 Datasheet (PDF)

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