AOTF16N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOTF16N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 84 nS

Cossⓘ - Capacitancia de salida: 191 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.37 Ohm

Encapsulados: TO-220F

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AOTF16N50 datasheet

 ..1. Size:490K  aosemi
 aot16n50 aotf16n50.pdf pdf_icon

AOTF16N50

AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:160K  aosemi
 aotf16n50.pdf pdf_icon

AOTF16N50

AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..3. Size:226K  inchange semiconductor
 aotf16n50.pdf pdf_icon

AOTF16N50

isc N-Channel Mosfet Transistor AOTF16N50 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Low ON Resistance R = 0.37 (Max) DS(on) Low leakage current Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE

 8.1. Size:490K  aosemi
 aotf160a60l aot160a60l aob160a60l.pdf pdf_icon

AOTF16N50

AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max

MOSTRAR MÁS

Otros transistores... AOTF12T50PL, AOTF12T60, AOTF12T60P, AOTF13N50, AOTF14N50, AOTF14N50FD, AOTF15S60, AOTF15S65, AON6414A, AOTF18N65, AOTF20C60, AOTF20N40, AOTF20N60, AOTF20S60, AOTF22N50, AOTF240L, AOTF256L