AOTF16N50 MOSFET Datasheet: N-Ch, 500V, 16A. Full specification with pinout and replacement list

AOTF16N50 Specs and Replacement

Type Designator: AOTF16N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 84 nS

Cossⓘ - Output Capacitance: 191 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm

Package: TO-220F

AOTF16N50 substitution

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AOTF16N50 datasheet

..1. Size:490K aosemi
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AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:160K aosemi
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..3. Size:226K inchange semiconductor
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isc N-Channel Mosfet Transistor AOTF16N50 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Low ON Resistance R = 0.37 (Max) DS(on) Low leakage current Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE... See More ⇒

8.1. Size:490K aosemi
aotf160a60l aot160a60l aob160a60l.pdf pdf_icon

AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒