AOW11S60 Todos los transistores

 

AOW11S60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOW11S60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 178 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 37.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.399 Ohm
   Paquete / Cubierta: TO-262
     - Selección de transistores por parámetros

 

AOW11S60 Datasheet (PDF)

 ..1. Size:277K  aosemi
aow11s60.pdf pdf_icon

AOW11S60

AOW11S60/AOWF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW11S60 & AOWF11S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 11nCBy providing low RDS(on), Qg a

 ..2. Size:298K  inchange semiconductor
aow11s60.pdf pdf_icon

AOW11S60

isc N-Channel MOSFET Transistor AOW11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 7.1. Size:259K  aosemi
aow11s65.pdf pdf_icon

AOW11S60

AOW11S65/AOWF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW11S65 & AOWF11S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 13.2nCBy providing low RDS(on), Qg

 7.2. Size:298K  inchange semiconductor
aow11s65.pdf pdf_icon

AOW11S60

isc N-Channel MOSFET Transistor AOW11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2224-01R | FDMS3660AS | HFS2N60S | SQ3460EV | UT20N03 | WPM4801 | S68N08ZRN

 

 
Back to Top

 


 
.