AOW11S60 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AOW11S60
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 178 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 37.3 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.399 Ohm
Тип корпуса: TO-262
AOW11S60 Datasheet (PDF)
aow11s60.pdf
AOW11S60/AOWF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW11S60 & AOWF11S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 11nCBy providing low RDS(on), Qg a
aow11s60.pdf
isc N-Channel MOSFET Transistor AOW11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
aow11s65.pdf
AOW11S65/AOWF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW11S65 & AOWF11S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 13.2nCBy providing low RDS(on), Qg
aow11s65.pdf
isc N-Channel MOSFET Transistor AOW11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
aow11n60.pdf
AOW11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW11N60 has been fabricated using an advanced 700V@150high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)
aow11n60.pdf
isc N-Channel MOSFET Transistor AOW11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SUN0460I2
