All MOSFET. AOW11S60 Datasheet

 

AOW11S60 Datasheet and Replacement


   Type Designator: AOW11S60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 37.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm
   Package: TO-262
 

 AOW11S60 substitution

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AOW11S60 Datasheet (PDF)

 ..1. Size:277K  aosemi
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AOW11S60

AOW11S60/AOWF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOW11S60 & AOWF11S60 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 11nCBy providing low RDS(on), Qg a

 ..2. Size:298K  inchange semiconductor
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AOW11S60

isc N-Channel MOSFET Transistor AOW11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 7.1. Size:259K  aosemi
aow11s65.pdf pdf_icon

AOW11S60

AOW11S65/AOWF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOW11S65 & AOWF11S65 have been fabricatedusing the advanced MOSTM high voltage process that is IDM 45Adesigned to deliver high levels of performance and RDS(ON),max 0.399robustness in switching applications. Qg,typ 13.2nCBy providing low RDS(on), Qg

 7.2. Size:298K  inchange semiconductor
aow11s65.pdf pdf_icon

AOW11S60

isc N-Channel MOSFET Transistor AOW11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: AOU7S65 , AOV11S60 , AOV15S60 , AOV20S60 , AOW10N60 , AOW10N65 , AOW10T60P , AOW11N60 , AO3407 , AOW11S65 , AOW12N50 , AOW12N60 , AOW12N65 , AOW14N50 , AOW15S60 , AOW15S65 , AOW20C60 .

History: SVF4N65CMJ | TPA70R260M | OSG70R1KPF | STL8P2UH7 | IXTM7N45 | CHM2321GP | AP40T03GP

Keywords - AOW11S60 MOSFET datasheet

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