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AOW14N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOW14N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 278 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 84 nS

Cossⓘ - Capacitancia de salida: 191 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm

Encapsulados: TO-262

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AOW14N50 datasheet

 ..1. Size:285K  aosemi
aow14n50 aowf14n50.pdf pdf_icon

AOW14N50

AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOW14N50 & AOWF14N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 14A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 ..2. Size:323K  aosemi
aow14n50.pdf pdf_icon

AOW14N50

AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS The AOW14N50 & AOWF14N50 have been fabricated 600V@150 using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V) designed to deliver high levels of performance and

 ..3. Size:298K  inchange semiconductor
aow14n50.pdf pdf_icon

AOW14N50

isc N-Channel MOSFET Transistor AOW14N50 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

Otros transistores... AOW10N65 , AOW10T60P , AOW11N60 , AOW11S60 , AOW11S65 , AOW12N50 , AOW12N60 , AOW12N65 , IRFZ44N , AOW15S60 , AOW15S65 , AOW20C60 , AOW20S60 , AOW2500 , AOW25S65 , AOW284 , AOW2918 .

History: SW4N70K | HD1H15A

 

 

 


History: SW4N70K | HD1H15A

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