All MOSFET. AOW14N50 Datasheet

 

AOW14N50 Datasheet and Replacement


   Type Designator: AOW14N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 278 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 191 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-262
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AOW14N50 Datasheet (PDF)

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AOW14N50

AOW14N50/AOWF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDSThe AOW14N50 & AOWF14N50 have been fabricated 600V@150using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V)designed to deliver high levels of performance and

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AOW14N50

isc N-Channel MOSFET Transistor AOW14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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History: AM4841P | CED05N8 | AON6794 | IRLR024 | PSMN5R8-40YS | BUZ84 | BL10N70-A

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