AOW14N50 Specs and Replacement
Type Designator: AOW14N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 84 nS
Cossⓘ - Output Capacitance: 191 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO-262
AOW14N50 substitution
- MOSFET ⓘ Cross-Reference Search
AOW14N50 datasheet
aow14n50 aowf14n50.pdf
AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOW14N50 & AOWF14N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 14A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aow14n50.pdf
AOW14N50/AOWF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS The AOW14N50 & AOWF14N50 have been fabricated 600V@150 using an advanced high voltage MOSFET process that is 14A ID (at VGS=10V) designed to deliver high levels of performance and ... See More ⇒
aow14n50.pdf
isc N-Channel MOSFET Transistor AOW14N50 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: AOW10N65, AOW10T60P, AOW11N60, AOW11S60, AOW11S65, AOW12N50, AOW12N60, AOW12N65, IRFZ44N, AOW15S60, AOW15S65, AOW20C60, AOW20S60, AOW2500, AOW25S65, AOW284, AOW2918
Keywords - AOW14N50 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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