AOW20S60 Todos los transistores

 ..1. Size:279K  aosemi
 aow20s60.pdf

AOW20S60/AOWF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW20S60 & AOWF20S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 80A designed to deliver high levels of performance and RDS(ON),max 0.199 robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg a

 ..2. Size:279K  aosemi
 aow20s60 aowf20s60.pdf

AOW20S60/AOWF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW20S60 & AOWF20S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 80A designed to deliver high levels of performance and RDS(ON),max 0.199 robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg a

 ..3. Size:300K  inchange semiconductor
 aow20s60.pdf

isc N-Channel MOSFET Transistor AOW20S60 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:222K  aosemi
 aow20c60.pdf

AOW20C60 600V,20A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700 The AOW20C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high IDM 145A levels of performance and robustness in popular AC-DC RDS(ON),max