AOW20S60 PDF and Equivalents Search

 

AOW20S60 Specs and Replacement

Type Designator: AOW20S60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 266 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm

Package: TO-262

AOW20S60 substitution

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AOW20S60 datasheet

 ..1. Size:279K  aosemi
aow20s60.pdf pdf_icon

AOW20S60

AOW20S60/AOWF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW20S60 & AOWF20S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 80A designed to deliver high levels of performance and RDS(ON),max 0.199 robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg a... See More ⇒

 ..2. Size:279K  aosemi
aow20s60 aowf20s60.pdf pdf_icon

AOW20S60

AOW20S60/AOWF20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOW20S60 & AOWF20S60 have been fabricated using the advanced MOSTM high voltage process that is IDM 80A designed to deliver high levels of performance and RDS(ON),max 0.199 robustness in switching applications. Qg,typ 20nC By providing low RDS(on), Qg a... See More ⇒

 ..3. Size:300K  inchange semiconductor
aow20s60.pdf pdf_icon

AOW20S60

isc N-Channel MOSFET Transistor AOW20S60 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 9.1. Size:222K  aosemi
aow20c60.pdf pdf_icon

AOW20S60

AOW20C60 600V,20A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700 The AOW20C60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high IDM 145A levels of performance and robustness in popular AC-DC RDS(ON),max ... See More ⇒

Detailed specifications: AOW11S65 , AOW12N50 , AOW12N60 , AOW12N65 , AOW14N50 , AOW15S60 , AOW15S65 , AOW20C60 , 20N60 , AOW2500 , AOW25S65 , AOW284 , AOW2918 , AOW298 , AOW29S50 , AOW410 , AOW418 .

Keywords - AOW20S60 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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