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AOW482 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOW482
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 333 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 105 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 458 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
   Paquete / Cubierta: TO-262
     - Selección de transistores por parámetros

 

AOW482 Datasheet (PDF)

 ..1. Size:254K  aosemi
aow482.pdf pdf_icon

AOW482

AOW48280V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS80VThe AOW482 is fabricated with SDMOSTM trench ID (at VGS=10V) 105Atechnology that combines excellent RDS(ON) with low gatecharge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 ..2. Size:298K  inchange semiconductor
aow482.pdf pdf_icon

AOW482

isc N-Channel MOSFET Transistor AOW482FEATURESDrain Current I =105A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:366K  aosemi
aow480.pdf pdf_icon

AOW482

AOW48080V N-Channel MOSFETTMSDMOSGeneral Description Product Summary VDS 80VThe AOW480 is fabricated with SDMOSTM trenchtechnology that combines excellent RDS(ON) with low gate ID (at VGS=10V) 180Acharge & low Qrr.The result is outstanding efficiency with RDS(ON) (at VGS=10V)

 9.2. Size:298K  inchange semiconductor
aow480.pdf pdf_icon

AOW482

isc N-Channel MOSFET Transistor AOW480FEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =80V(Min)DSSStatic Drain-Source On-Resistance: R = 4.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HM5N30K | 2SK4146-S19-AY | SSW47N60SFD | APM4461AK | IXTT68P20T | KF7N50I | FIR24N50APTG

 

 
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